SPEC SHEET 2N5294
Chip Appearance Chip Size Chip Thickness Bonding Pad Dimension Scribe Line Width Top Metal Back Metal Raper Size Absolute Max Ratings (Ta=25C) Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Loss (Power Dissipation) Junction Temperature Storage Temperature Electrical Characteristics (Ta=25C) Item Symbol Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector Saturation Probing Spec (Ta=25C) No. Mode Min. 1 2 3 4 5 6 7 V BE B V CEO I CBO I EBO I CEO h FE V CE(SAT) 70 30 B V CBO B V CEO B V EBO I CBO I EBO h FE V CE(SAT) Base Emitter 1.9mm x 1.9mm 230 20m 665m x 315m 555 m x 325 m 50m Al Ti-Ni-Ag 4 inch (TO-220) Symbol V CBO V CEO V EBO IC PC Tj T stg Max Ratings 80 70 7 4 36 -65 to +150 Unit V V V mA W C C (TO-220) Min. 80 70 7 30 Typ. Max. 1 120 1 Unit V V V A mA V Condition IC = 100 A IC = 200 mA IE = 100 A VCB = V VEB = 7V VCE = 4 V, IC = 500mA IC = 500mA, IB = 50mA Note
Limit Max. 1 120 1
Condition Unit V V A mA A V IB= I C = 200mA V CB = V V EB = 7V V CE = V V CE = 4 V, I C = 500A I C = 500mA, I B = 50mA
|
